首页 | 本学科首页   官方微博 | 高级检索  
     检索      


Effects of different buffer layers on the electro-luminescence performances in white organic light-emitting diodes
Authors:Peng Yu Chen  Meiso Yokoyama
Institution:a Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung 804, Taiwan, Republic of China
b Department of Electronic Engineering, I-Shou University, Kaohsiung County 840, Taiwan, Republic of China
Abstract:The effects of different hole injection materials as the buffer layer on the electro-luminescence (EL) performances of white organic light-emitting diodes (WOLEDs) are investigated in detail. It is found that the EL performances and electric properties were strongly dependent on the structure of the used hole injection materials with different thicknesses, which directly affected the injection and transport properties in devices, and thus the EL efficiency and lifetime. It can be seen that a hybrid buffer layer of 5 nm aluminum fluoride (AlF3)/15 nm 4,4′,4″-tris(3-methylphenylphenylamino) (m-MTDATA) as the hole injection buffer layer shows the best EL performances in efficiency and lifetime, showing a promising hole injection material in WOLEDs. The mechanisms behind the enhanced performance of the hybrid buffer layer in WOLEDs are discussed based on X-ray photoelectron spectroscopy (XPS) measurement.
Keywords:A  Thin films  D  Luminescence  D  Transport properties
本文献已被 ScienceDirect 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号