Synthesis and luminescence properties of YVO4:Eu,Bi phosphor with enhanced photoluminescence by Bi doping |
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Authors: | Zhiguo Xia Daimei Chen Min Yang Ting Ying |
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Affiliation: | School of Materials Sciences and Technology, China University of Geosciences, Beijing 100083, PR China |
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Abstract: | YVO4:Eu3+,Bi3+ phosphors have been prepared by the high-temperature solid-state (HT) method and the Pechini-type sol-gel (SG) method. Spherical SiO2 particles have been further coated with YVO4:Eu3+,Bi3+ phosphor layers by the Pechini-type SG process, and it leads to the formation of core-shell structured SiO2/YVO4:Eu3+,Bi3+ phosphors. Therefore, the phase formations, structures, morphologies, and photoluminescence properties of the three types of as-prepared YVO4:Eu3+,Bi3+ phosphors were studied in detail. The average diameters for the phosphor particles are 2-4 μm for HT method, 0.1-0.4 μm for SG method, and 0.5 μm for core-shell structured SiO2/YVO4:Eu3+,Bi3+ particles, respectively. Photoluminescence spectra show that effective energy transfer takes place between Bi3+ and Eu3+ ions in each type of as-prepared YVO4:Eu3+,Bi3+ phosphors. Introduction of Bi3+ into YVO4:Eu3+ leads to the shift of excitation band to the long-wavelength region, thus the emission intensities of 5D0-7F2 electric dipole transition of Eu3+ at 615 nm upon 365 nm excitation increases sharply, which makes this phosphor a suitable red-emitting materials that can be pumped with near-UV light emitting diodes (LEDs). |
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Keywords: | A. Optical materials D. Luminescence D. Optical properties |
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