Synthesis and luminescence properties of YVO4:Eu,Bi phosphor with enhanced photoluminescence by Bi doping

YVO₄:Eu³⁺,Bi³⁺ phosphors have been prepared by the high-temperature solid-state (HT) method and the Pechini-type sol-gel (SG) method. Spherical SiO₂ particles have been further coated with YVO₄:Eu³⁺,Bi³⁺ phosphor layers by the Pechini-type SG process, and it leads to the formation of core-shell structured SiO₂/YVO₄:Eu³⁺,Bi³⁺ phosphors. Therefore, the phase formations, structures, morphologies, and photoluminescence properties of the three types of as-prepared YVO₄:Eu³⁺,Bi³⁺ phosphors were studied in detail. The average diameters for the phosphor particles are 2-4 μm for HT method, 0.1-0.4 μm for SG method, and 0.5 μm for core-shell structured SiO₂/YVO₄:Eu³⁺,Bi³⁺ particles, respectively. Photoluminescence spectra show that effective energy transfer takes place between Bi³⁺ and Eu³⁺ ions in each type of as-prepared YVO₄:Eu³⁺,Bi³⁺ phosphors. Introduction of Bi³⁺ into YVO₄:Eu³⁺ leads to the shift of excitation band to the long-wavelength region, thus the emission intensities of ⁵D₀-⁷F₂ electric dipole transition of Eu³⁺ at 615 nm upon 365 nm excitation increases sharply, which makes this phosphor a suitable red-emitting materials that can be pumped with near-UV light emitting diodes (LEDs).