Dielectric and leakage current properties of Li doped (Ba,Sr)TiO3 thick film interdigital capacitors on the alumina substrates

Li doped (Ba,Sr)TiO₃ thick films were fabricated by employing the screen printing method on the alumina (Al₂O₃) substrates. Interdigital capacitor patterns with seven fingers of 200 μm gap, 250 μm length were designed and screen printed on the alumina substrates. Ba_0.5Sr_0.5TiO₃ materials, paraelectric state at the room temperature, have been chosen for the microwave devices due to high dielectric permittivity and low loss tangent, however, the sintering temperature of (Ba,Sr)TiO₃ is over 1350 °C. In order to lower the sintering temperature, Li (3 wt%) was added to the (Ba,Sr)TiO₃ materials. Li doped (Ba,Sr)TiO₃ thick films screen printed on the alumina (Al₂O₃) substrates were sintered at 900 °C for 1.5 h. The structural feature was analyzed with X-ray diffraction method. Temperature dependent dielectric properties were characterized from 303 to 403 K at 1 MHz. Within the ±100 V of bias voltage, current-voltage characteristics of Li doped (Ba,Sr)TiO₃ films were investigated from 303 to 403 K. Through the current-voltage characteristics, the resistivity of Li doped (Ba,Sr)TiO₃ films were calculated.In this paper, the significant negative temperature coefficient of resistance (NTCR) of Li doped (Ba,Sr)TiO₃ films will be presented through the activation energy fitting. Measured activation energy is approximately 0.366 eV.