High‐temperature stability of Au/p‐type diamond Schottky diode |
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| Authors: | Tokuyuki Teraji Yasuo Koide Toshimichi Ito |
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| Affiliation: | 1. Sensor Materials Center, National Institute for Materials Science, 1‐1 Namiki, Tsukuba, Ibaraki 305‐0044, Japan;2. Department of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, 2‐1 Yamada‐oka, Suita, Osaka 565‐0871, Japan |
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| Abstract: | Rectification properties of Au Schottky diodes were investigated in high‐temperature operation. These diodes were fabricated on a p‐type diamond single crystal using the vacuum‐ultraviolet light/ozone treatment. The ideality factor n of the Schottky diodes decreased monotonically with increasing measurement temperature whereas the Schottky barrier height ?b increased, and ?b reached 2.6 eV at 550 K with n of 1.1. Through high temperature heating at 870 K, the mean value of ?b at 300 K changed permanently from 2.2 eV to 1.1 eV. Decrease of ?b might originate from a dissolution of oxygen termination at the Au/diamond interface. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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| Keywords: | 73.20.− r 73.30.+y 73.40.− c 81.05.Uw |
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