Room‐temperature epitaxial growth of high‐quality m ‐plane InGaN films on ZnO substrates |
| |
| Authors: | Kazuma Shimomoto Atsushi Kobayashi Kohei Ueno Jitsuo Ohta Masaharu Oshima Hiroshi Fujioka Hidetaka Amanai Satoru Nagao Hideyoshi Horie |
| |
| Institution: | 1. Institute of Industrial Science, The University of Tokyo, 4‐6‐1 Komaba, Tokyo 153‐8505, Japan;2. Kanagawa Academy of Science and Technology (KAST), 3‐2‐1 Sakado, Takatsu‐ku, Kawasaki 213‐0012, Japan;3. Department of Applied Chemistry, The University of Tokyo, 7‐3‐1 Hongo, Tokyo 113‐8656, Japan;4. Core Research for Evolutional Science and Technology of Japan Science and Technology Corporation (JST‐CREST), 5 Sanban‐cho, Chiyoda‐ku, Tokyo 102‐0075, Japan;5. Mitsubishi Chemical Group, Science and Technology Research Center, 1000 Higashi‐Mamiana, Ushiku‐shi, Ibaraki 300‐1295, Japan |
| |
| Abstract: | The authors have grown high‐quality m ‐plane In0.36Ga0.64N (1 00) films on ZnO (1 00) substrates at room temperature (RT) by pulsed laser deposition (PLD) and have investigated their structural properties. m ‐plane InGaN films grown on ZnO substrates at RT possess atomically flat surfaces with stepped and terraced structures, indicating that the film growth proceeds in a two‐dimensional mode. X‐ray diffraction measurements have revealed that the m ‐plane InGaN films grow without phase separation reactions at RT. The full‐width at half‐maximum values of the 1 00 X‐ray rocking curves of films with X‐ray incident azimuths perpendicular to the c ‐ and a‐axis are 88 arcsec and 78 arcsec, respectively. Reciprocal space‐mapping has revealed that a 50 nm thick m ‐plane In0.36Ga0.64N film grows coherently on the ZnO substrate, which can probably explain the low defect density that is observed in the film. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
| |
| Keywords: | 61 05 cp 68 55 ag 81 05 Ea 81 15 Fg |
|
|
