High‐density guided growth of silicon nanowires in nanoporous alumina on Si(100) substrate: Estimation of activation energy |
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| Authors: | D. Buttard T. David P. Gentile F. Dhalluin T. Baron |
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| Affiliation: | 1. CEA‐Grenoble/INAC/SiNaPS‐MINATEC, 17 avenue des martyrs, 38054 Grenoble, France;2. Université Joseph Fourier/IUT‐1, 17 quai C. Bernard, 38000 Grenoble, France;3. CNRS/LTM, 17 avenue des martyrs, 38054 Grenoble, France |
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| Abstract: | High‐density growth of silicon nanowires confined within a nanoporous alumina template is carried out. The growth rate is measured for several temperatures. An incubation time is observed and measured. The activation energy of this system is calculated and compared to that of growth on a free silicon surface. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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| Keywords: | 61.46.Km 68.37.Hk 81.07.− b 81.16.Dn 81.16.Rf 82.45.Yz |
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