1. Institute for Materials Research (IMO), Hasselt University, Wetenschapspark 1, 3590 Diepenbeek, Belgium;2. Division IMOMEC, IMEC vzw, Wetenschapspark 1, 3590 Diepenbeek, Belgium;3. Sensor Materials Center, National Institute for Materials Science (NIMS), 1‐1 Namiki, Tsukuba, Ibaraki 305‐0044, Japan
Abstract:
The current–voltage characteristics and photoresponse of mesa structured {111}‐oriented homoepitaxial CVD diamond p(i)n‐junctions with different intrinsic layer thickness are investigated. When a sufficiently thick intrinsic layer is present, a rectification ratio of 108 at ±10 V could be obtained. Good rectifying diodes show a high photoresponse ratio between 210 nm (above bandgap) and 500 nm (below bandgap), making them suitable for UV detection purposes. The results are compared with similar measurements carried out on polycrystalline CVD diamond pn‐junctions.
