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The link between nanoscale feature development in a negative resist and the Hansen solubility sphere
Authors:Deirdre L Olynick  Paul D Ashby  Mark D Lewis  Timothy Jen  Haoren Lu  J Alexander Liddle  Weilun Chao
Institution:1. Molecular Foundry, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720;2. Center for X‐Ray Optics, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720
Abstract:By systematically studying development of a high resolution, negative electron beam resist, hexa‐methyl acetoxy calix(6)arene, we have elicited a more general understanding of the underlying development mechanisms for negative resists. Using the three dimensional Hansen solubility parameters for more than 40 solvents, we have constructed a Hansen solubility sphere (HSS). From this sphere, we have estimated the Flory Huggins interaction parameter for solvents with hexa‐methyl acetoxy calix(6)arene and found a correlation between resist development contrast, nanoscale patterned feature quality, and the polymer‐solvent solubility. Conducting Atomic Force Microscopy (AFM) in a liquid cell, we have measured swelling for hexa‐methyl acetoxy calix(6)arene in four solvents. The swelling measurements indicate that the HSS gives an indication of the Flory‐Huggins interaction parameter. These measurements provide new insights into the development behavior of nanoscale features – necessary for obtaining the ultimate lithographic resolution. In addition, it demonstrates a methodology for choosing appropriate polymer‐solvent combinations for nanoscience applications. © 2009 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 47: 2091–2105, 2009
Keywords:calixarene  chi  electron beam irradiation  electron beam lithography  Flory‐Huggins interaction parameter  hansen solubility sphere  lithography resists  nanofabrication  nanopatterning  photoresists  solvent‐polymer interactions  swelling
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