Large area mapping of the alloy composition of Alx Ga1–x N using infrared reflectivity |
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Authors: | A Henry A Lundskog E Janzén |
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Institution: | Department of Physics, Chemistry and Biology, Link?ping University, 58 183 Link?ping, Sweden |
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Abstract: | The energy position of a dip observed in the IR‐reflectance spectra recorded from wurtzite c ‐plane Alx Ga1–x N epitaxial films grown on SiC substrate reflects the composition of the alloy. A calibration procedure is presented with the possibility of mapping for large area wafer. The technique is non‐destructive, scalable and fast. The limitations are discussed and comparisons with other techniques are made. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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Keywords: | 61 05 cp 68 55 ag 68 55 Nq 78 30 Fs 81 15 Gh 81 70 Fy |
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