Comparing the weak and strong gate‐coupling regimes for nanotube and graphene transistors |
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| Authors: | I Heller S Chatoor J Mnnik M A G Zevenbergen C Dekker S G Lemay |
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| Institution: | Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands |
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| Abstract: | We present an experimental and theoretical comparison of the weak and strong gate‐coupling regimes that arise for carbon nanotube (CNT) and graphene field‐effect transistors (FETs) in back‐gated and liquid‐gated configuration, respectively. We find that whereas the back‐gate efficiency is suppressed for a liquid‐gated CNT FET, the back gate is still effective in case of a liquid‐gated graphene FET. We calculate the gate‐induced Fermi‐level shifts and induced charge densities. In both strong and weak coupling regimes, nonlinearities occur in the gate dependence of these parameters, which can significantly influence the electronic transport. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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| Keywords: | 81 05 Uw 81 07 − b 81 07 De 85 30 Tv 85 35 − p 85 35 Kt |
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