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Doped single‐walled carbon nanotubes and low‐mobility graphene: impact of disorder and dopants on electronic magnetotransport
Authors:Vojislav Krsti&#x  ,Marianne Glerup,Stefan Hansel,Myrsini Lafkioti
Affiliation:1. Department of Chemistry, University of Oslo, P.O. Box 1033 Blindern, 0315 Oslo, Norway;2. School of Physics, Centre for Research on Adaptive Nanostructures and Nanodevices, Trinity College Dublin, Dublin 2, Ireland;3. Laboratoire National de Champs Magnétiques Intenses, Site de Toulouse, 143, Ave. de Rangueil, 31400 Toulouse, France;4. Max‐Planck‐Institut für Festk?rperforschung, Heisenbergstr. 1, 70569 Stuttgart, Germany
Abstract:The impact of disorder introduced by intentional and unintentional (environmental) dopants on the charge transport has been investigated in boron‐ and nitrogen‐doped single‐walled carbon nanotubes, and in low‐mobility monolayer graphene. For doped single‐walled nanotubes a theoretically not predicted plateau‐like region and onsets of oscillatory behaviour in the conductance for boron‐ and nitrogen‐doped nanotubes were observed, respectively. The oscillatory behaviour suggests interplay between the dopants and the helical movement of charges along the tube due to the magnetic field. For low‐mobility graphene the simultaneous appearance of the filling‐factor 2 and 3 plateau was observed in the Quantum‐Hall regime. This is attributed to an electron‐spin–isospin interaction mediated through the high disorder. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Keywords:72.80.Rj  73.43.Qt  73.63.−  b  73.63.Fg  81.05.Uw
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