Polarization of valence band holes in the (Ga,Mn)as diluted magnetic semiconductor |
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Authors: | Sapega V F Moreno M Ramsteiner M Däweritz L Ploog K H |
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Institution: | Paul-Drude-Institut für Festk?rperelektronik, Berlin, Germany. sapega@dnm.ioffe.rssi.ru |
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Abstract: | We report on direct measurements of the impurity band hole polarization in the diluted magnetic semiconductor (Ga,Mn)As. The polarization of impurity band holes in a magnetic field is strongly enhanced by antiferromagnetic exchange interaction with Mn ions. The temperature dependence of the hole polarization shows a strong increase of this polarization below the Curie temperature. We show that the ground state of the impurity band is formed by uniaxial stress split F=+/-1 states of antiferromagnetically coupled Mn ions (S=5/2) and valence band holes (J=3/2). The gap between the Mn acceptor related impurity band and the valence band is directly measured in a wide range of Mn content. |
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