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0.87Na0.5Bi0.5TiO3-0.13PbTiO3薄膜的MOSD+Dipping制备
引用本文:王卓,杨长红,王民,房昌水.0.87Na0.5Bi0.5TiO3-0.13PbTiO3薄膜的MOSD+Dipping制备[J].人工晶体学报,2004,33(5):817-819.
作者姓名:王卓  杨长红  王民  房昌水
作者单位:山东大学晶体材料国家重点实验室,济南,250100
摘    要:采用MOSD+Dipping方法在P型Si(111)衬底上制备了0.87Na0.5Bi0.5TiO3-0.13PbTiO3薄膜.用X射线衍射技术研究了薄膜的结构和结晶性.用原子力显微镜分析了薄膜的表面形貌.同时还研究了薄膜的存储性能.

关 键 词:MOSD+Dipping法  C-V曲线  铁电薄膜  
文章编号:1000-985X(2004)05-0817-03

Preparation of 0.87 Na0.5Bi0.5TiO3-0.13PbTiO3 Thin Films by MOSD+Dipping Method
WANG Zhuo,YANG Chang-hong,WANG Min,FANG Chang-shui.Preparation of 0.87 Na0.5Bi0.5TiO3-0.13PbTiO3 Thin Films by MOSD+Dipping Method[J].Journal of Synthetic Crystals,2004,33(5):817-819.
Authors:WANG Zhuo  YANG Chang-hong  WANG Min  FANG Chang-shui
Abstract:0.87 Na0.5Bi0.5TiO3 -0.13PbTiO3 thin films have been grown on P-Si(111) substrates by MOSD + Dipping method. The structural characteristic and crystallization of the films were examined by X-ray diffraction (XRD) . The surface morphologies of the films were examined by atomic force microscopy (AFM). The memory effect of the films was also studied.
Keywords:MOSD+ Dipping method  C-V curve  ferroelectric thin films
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