| 应用高压高功率的微晶硅薄膜高速沉积 |
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| 引用本文： | 赵之雯,刘玉岭.应用高压高功率的微晶硅薄膜高速沉积[J].光电子．激光,2011(4):555-557. |
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| 作者姓名： | 赵之雯 刘玉岭 |
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| 作者单位： | 河北工业大学信息工程学院； 天津职业技术师范大学电子工程学院；;河北工业大学信息工程学院； |
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| 基金项目： | 国家中长期科技发展规划02科技重大专项资助项目(2009ZX02308);高等学校博士学科点专项科研基金资助项目(20050080007) |
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| 摘 要： | 应用高压高功率(hphP)甚高频等离子增强化学气相沉积(VHF-PECVD)法对微晶硅(μc-Si:H)进行高速沉积,确定了hphP VHF-PECVD法沉积μc-Si:H的最优条件参数,在此参数下对hphP和低压低功率(IplP)两组样品沉积速率、光电导、暗电导及光敏性等性能参数进行测试,得到了1.58 nm的较高沉...
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| 关 键 词： | 微晶硅(μc-Si:H)薄膜 高压高功率(hphP)甚高频等离子增强化学气相沉积(VHF-PECVD) 高速沉积 |
High rate deposition of microcrystalline silicon thin films under high pressure and high power |
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| ZHAO Zhi-wen and LIU Yu-ling.High rate deposition of microcrystalline silicon thin films under high pressure and high power[J].Journal of Optoelectronics·laser,2011(4):555-557. |
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| Authors: | ZHAO Zhi-wen and LIU Yu-ling |
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| Institution: | School of Information engineering,HeBei University of Technology,Tianjin 300130,China; School of Electronic Engineering,Tianjin University of Technology and Education,Tianjin 300222,China;School of Information engineering,HeBei University of Technology,Tianjin 300130,China; |
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| Abstract: | In this paper,the high rate deposition of microcrystalline silicon thin films is achieved by very high frequency plasma enhanced chemical vapor deposition(VHF-PECVD) working at high pressure and high power(HPHP).The best deposition parameters are determined.Under these deposition parameters,the HPHP films show better optical and electrical properties.The deposition rate,photo-conductivity,dark conductivity and photo-sensitivity are tested.The results show that the way of depositing microcrystall... |
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| Keywords: | microcrystalline silicon(μc-Si:H) thin film high pressure and high power(hphP) VHF-PECVD high rate deposition |
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