Kinetics of nonconservative liquid phase epitaxy of semiconductors

An expression is obtained for the stationary growth rate for two- and three-component systems in the diffusion mode on the basis of a detailed analysis of the components in the liquid phase and on its boundaries. It is shown that the solution-melt experiences a hydrodynamic flow opposite to the crystallization boundary at a velocity close to the growth rate in value. Also revealed are the singularities of the kinetics of the process in three-component systems that are associated with unbalanced identically directed diffusion fluxes of components forming a stoichiometric semiconducting compound.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 15–19, August, 1988.