Selective wet-etching of amorphous/crystallized Ag–As–S and Ag–As–S–Se chalcogenide thin films |
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| Institution: | 1. Department of General and Inorganic Chemistry, Faculty of Chemical Technology, University of Pardubice, Cs. Legion''s sq. 565, Pardubice 532 10, Czech Republic;2. Joint Laboratory of Solid State Chemistry of the University of Pardubice and the Institute of Macromolecular Chemistry AS CR University of Pardubice, Studentska 95, Pardubice 532 10, Czech Republic;3. Institute of Inorganic Chemistry, Acad. Sci. CR, 25068 Rez u Prahy, Czech Republic;4. Czech Metrology Institute, Okruzni 31, 638 00 Brno, Czech Republic |
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| Abstract: | The paper is focused on the possibilities of selective wet etching of optically and thermally crystallized/amorphous Ag-doped chalcogenide thin films, namely Agx(As0.33S0.67)100?x and Agx(As0.33S0.335Se0.335)100?x. The selective etching of optically(thermally) crystallized Agx(As0.33S0.67)100?x and thermally crystallized Agx(As0.33S0.335Se0.335)100?x thin films in water solution of NaCN is presented. The good surface quality is an important and crucial parameter for optical elements fabrication (e.g. grids, waveguides, etc.) especially in nanometer dimensions. The selective etching of undoped and Ag optically doped region was also carried out to observe surface roughness of doped region before and after selective etching. Characterization of the structure and surface of studied films by Raman spectroscopy, X-ray diffraction, AFM and SEM methods has been done and potential application suggested. |
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