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Defect structure of Bi2−xAsxTe3 single crystals |
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| Institution: | 1. Faculty of Chemical Technology, University of Pardubice, Čs. Legií 565, 53210 Pardubice, Czech Republic;2. Joint Laboratory of Solid State Chemistry of Institute of Macromolecular Chemistry of the Academy of Science of the Czech Republic and University of Pardubice, Studentská 84, 53210 Pardubice, Czech Republic |
| Abstract: | Single crystals Bi2−xAsxTe3 were prepared by a modified Bridgman technique. The samples were characterized by X-ray diffraction analyses and measurement of Hall coefficient and electrical conductivity. Atomic absorption spectroscopy (AAS) was used for determination of actual content of As in the samples. The doping of Bi2Te3 with As leads to a decrease of the free carriers concentration while their mobility increases. The observed effects are discussed within a point defect model of Bi2−xAsxTe3 crystals. |
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