A 1-Mbit MRAM based on 1T1MTJ bit cell integrated with copper interconnects |
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| Authors: | Durlam M Naji PJ Omair A DeHerrera M Calder J Slaughter JM Engel BN Rizzo ND Grynkewich G Butcher B Tracy C Smith K Kyler KW Ren JJ Molla JA Feil WA Williams RG Tehrani S |
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| Institution: | Motorola Inc., Tempe, AZ, USA; |
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| Abstract: | A low-power 1-Mb magnetoresistive random access memory (MRAM) based on a one-transistor and one-magnetic tunnel junction (1T1MTJ) bit cell is demonstrated. This is the largest MRAM memory demonstration to date. In this circuit, the magnetic tunnel junction (MTJ) elements are integrated with CMOS using copper interconnect technology. The copper interconnects are cladded with a high-permeability layer which is used to focus magnetic flux generated by current flowing through the lines toward the MTJ devices and reduce the power needed for programming. The 25-mm/sup 2/ 1-Mb MRAM circuit operates with address access times of less than 50 ns, consuming 24 mW at 3.0 V and 20 MHz. The 1-Mb MRAM circuit is fabricated in a 0.6-/spl mu/m CMOS process utilizing five layers of metal and two layers of poly. |
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