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ZnCoO稀磁半导体的室温磁性
引用本文:王漪,孙雷,韩德栋,刘力锋,康晋锋,刘晓彦,张兴,韩汝琦. ZnCoO稀磁半导体的室温磁性[J]. 物理学报, 2006, 55(12): 6651-6655
作者姓名:王漪  孙雷  韩德栋  刘力锋  康晋锋  刘晓彦  张兴  韩汝琦
作者单位:北京大学微电子学研究所,北京 100871
摘    要:采用固相反应法,将ZnO和Co2O3粉末按不同的成分配比混合,制备了稀磁半导体Zn1-xCoxO (x=0.02,0.06,0.10)材料.并使用H2气氛退火技术对样品进行了处理,得到了具有室温铁磁性的掺Co氧化锌稀磁半导体.利用全自动X射线衍射仪、X射线光电子能谱仪、高分辨透射电子显微镜和超导量子干涉器件磁强计对样品的结构、晶粒的尺寸、微观形貌以及磁性等进行了测量和标度.关键词:稀磁半导体氧化锌掺杂固相反应法

关 键 词:稀磁半导体  氧化锌  掺杂  固相反应法
文章编号:1000-3290/2006/55(12)/6651-05
收稿时间:2006-03-14
修稿时间:2006-07-05

Room-temperature ferromagnetism in Co-doped ZnO diluted magnetic semiconductor
Wang Yi,Sun Lei,Han De-Dong,Liu Li-Feng,Kang Jin-Feng,Liu Xiao-Yan,Zhang Xing,Han Ru-Qi. Room-temperature ferromagnetism in Co-doped ZnO diluted magnetic semiconductor[J]. Acta Physica Sinica, 2006, 55(12): 6651-6655
Authors:Wang Yi  Sun Lei  Han De-Dong  Liu Li-Feng  Kang Jin-Feng  Liu Xiao-Yan  Zhang Xing  Han Ru-Qi
Affiliation:Institute of Microelectrortws, Peking University, Beijing 100871, China
Abstract:The room-temperature ferromagnetism (RTFM) of Co-doped zinc oxide are reported in this paper. The Zn1-xCoxO (x=0.02, 0.06, 0.10) specimens were synthesized by solid state reaction of the mixture of ZnO and Co2O3 powders. The specimens were then annealed in the hydrogenation ambience. The RTFM was found in the hydrogenated samples, and the hysteresis loops of the hydrogenated Co-doped ZnO samples were measured at 300 K by using the superconducting quantum interference device magnetometer. The samples were further measured by X-ray diffraction, X-ray photoelectron spectroscopy, and high-resolution transmission electron microscopy.
Keywords:diluted magnetic semiconductor   ZnO   doping   solid state reaction
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