Al2O3陶瓷衬底碳离子预注入对金刚石薄膜应力的影响研究

通过对Al2O3陶瓷衬底进行碳离子预注入，大大降低了Al2O3陶瓷衬底上金刚石薄膜的应力，且金刚石薄膜中的压应力随碳离子注入剂量的增加而线性下降.通过对Al2O3陶瓷衬底注入前后的对比分析表明，高能量的碳离子注入Al2O3陶瓷衬底以后，并没有产生过渡层性质的新相，而是大量累积在Al2O3晶格的间隙位，使Al2O3晶格发生畸变.而且，随着碳离子注入剂量的增加，Al2O3基体内晶格畸变加剧，注入层残余压应力也随之上升.当金刚石薄膜沉积以后，在降温的过程中衬底这部分残余应力得到释放，从而部分弛豫了金刚石薄膜中的 关键词： 金刚石薄膜 应力 离子注入 Al2O3陶瓷

Study of the stress observed in diamond films on carbon-implanted alumina surfaces

The compressive stress in the diamond films formed on alumina ceramics can be reduced by implantation of carbon ions into alumina substrates before the deposition of diamond films. After carbon ion implantation, there is no new phase identified as interlayer by comparing the x-ray diffraction (XRD) patterns of the un-implanted and implanted substrates. In addition, the stress in the diamond films decreases linearly with the increase of the C+ implantation dose. This is because the implanted ions settle in the interstitial position and induce the residual compressive stress in the alumina lattice. This compressive stress, when the diamond films deposited and cooled down to room temperature, will be released and partly offset the compressive stress in the diamond films.