d 1 Electrons in amorphous semiconducting V2O5 and MoO3 compounds. (ESR measurements)

We have performed electron spin resonance experiments on binary amorphous V₂ O₅- and MoO₃ compounds (V₂O₅-TeO₂, V₂O₅-BaO, V₂O₅-PbO, V₂O₅-GeO₂, V₂O₅-As₂O₃, MoO₃-P₂O₅, MoO₃-TeO₂) and determined the parameters of the corresponding spin Hamiltonian by 3 cm-, 1.2 cm- and 8 mm band measurements. These measurements yielded values of the contribution to the mean energy difference of thed ¹ levels between different vanadium- or molybdenum sites caused by fluctuations of the crystal field.