Fabrication and characterization of Mn-doped Cu2O thin films grown by RF magnetron sputtering |
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Authors: | Yaping Zhang Liqing Pan Hao Zhu Hongmei Qiu Jinghua Yin Yang Li Fan Zhao Xuedan Zhao John Q Xiao |
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Institution: | 1. Department of Physics, University of Science and Technology, Beijing 100083, China;2. Department of Physics and Astronomy, University of Delaware, Newark, DE 19716, USA |
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Abstract: | Two series of Mn-doped Cu2O diluted-magnetic-semiconductor thin films were prepared by radio-frequency (RF) magnetron sputtering. One is prepared at different deposition temperature with the same Mn doping concentration; the other is deposited at the same temperature but with varying Mn concentration. They were used to find out the ferromagnetic-order zone for the Mn-doped Cu2O systems. Most of the samples show high (1 1 1) orientation, except low doping concentration (<6 at%). No impurities were found by X-ray diffraction and electron diffraction measurement. The doped Mn ions substituted Cu ions in the Cu2O lattice and there were about 1.5% cation vacancies. The grains shown in the transmission electron microscopy (TEM) images for all the samples were tiny, i.e. just 5 nm in diameter. A rough phase diagram for the ferromagnetic order existing in the Mn-doped Cu2O thin films was given with varying Mn doping concentration and deposition temperature. |
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Keywords: | Diluted magnetic semiconductor Cuprous oxide Mn-doping RF magnetron sputtering |
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