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CVD金刚石薄膜金属化及其与金属的焊接研究
引用本文:李新宇,高陇桥,刘征,郭辉.CVD金刚石薄膜金属化及其与金属的焊接研究[J].真空电子技术,2010(4):43-46.
作者姓名:李新宇  高陇桥  刘征  郭辉
作者单位:[1]北京真空电子技术研究所,北京100015 [2]河北激光研究所,石家庄050081
摘    要:针对CVD金刚石在微波管中的应用特点,提出一种金刚石膜表面金属化新工艺。该工艺采用Ti/Mo/Ni体系和磁控溅射镀膜方法,与无氧铜焊接获得了良好的接合性能,封接件平均抗拉强度大于113.7 MPa。X射线衍射分析证实:经820℃真空热处理,金刚石与钛膜界面形成Ti8C5和TiO。

关 键 词:CVD金刚石  磁控溅射  接合  抗拉强度

Study of Thin Film Metallization and Welding on CVD Diamond
LI Xin-yu,GAO Long-qiao,LIU Zheng,GUO Hui.Study of Thin Film Metallization and Welding on CVD Diamond[J].Vacuum Electronics,2010(4):43-46.
Authors:LI Xin-yu  GAO Long-qiao  LIU Zheng  GUO Hui
Institution:1. Beijing Vacuum Electronics Research Institute, Beijing 100015, China; 2. Institute of Hebei Laser Technology, Shijiazhuang 050081, China)
Abstract:This paper advanced a new technique about the diamond films surface metalizing for the pur pose of microwave tube applications. Ti/Mo/Ni muhilayer have been deposited on diamond films by mag netron sputtering, which joined with copper and obtained a good jointing capability, the sealing parts aver age tensile strength was above on 113.7 MPa. XRD approved: after 820℃ vacuum heat treatment, inter face between diamond and Ti formed Ti8C5 and TiO.
Keywords:Chemical vapor deposition diamond  Magnetron sputtering  Joining  Tensile strength
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