Refracted X-ray Fluorescence (RXF) on Si single crystal and GaAs |
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Authors: | Y. C. Sasaki K. Hirokawa |
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Affiliation: | (1) Department of Analytical Science, Institute for Materials Research, Tohoku University, Katahira 2-1-1, 980 Sendai, Japan |
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Abstract: | The Refracted X-ray Fluorescence (RXF) method can obtain the information about surfaces and interfaces: for example, surface electron density, chemical condition and surface roughness. We evaluated surfaces and interfaces of ultrathin films by using RXF method, and we measured the average lattice constant of a ultrathin GaAs film, the top-layer of a GaAs substrate and the surface roughness of the Si substrate below a ultrathin GaAs film grown by MBE. |
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Keywords: | 42.10.Fa 07.60.Hv 78.70.Ck |
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