Gate-modulated generation–recombination current in n-type metal–oxide–semiconductor field-effect transistor |
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引用本文: | 陈海峰.Gate-modulated generation–recombination current in n-type metal–oxide–semiconductor field-effect transistor[J].中国物理 B,2014(12):554-558. |
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作者姓名: | 陈海峰 |
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作者单位: | School of Electronic Engineering, Xi’an University of Posts and Telecommunications |
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基金项目: | Project supported by the National Natural Science Foundation of China(Grant No.61306131);the Research Project of Education Department of Shaanxi Province,China(Grant No.2013JK1095) |
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摘 要: | Gate-modulated generation–recombination(GMGR) current IGMGRinduced by the interface traps in an n-type metal–oxide–semiconductor field-effect transistor(n MOSFET) is investigated. The generation current is found to expand rightwards with increasing the reversed drain PN junction bias, and the recombination current is enhanced as the forward drain bias increases. The variations of IGMGRcurves are ascribed to the changes of the electron density and hole density at the interface, NSand PS, under the different drain bias voltages. Based on an analysis of the physical mechanism, the IGMGR model is set up by introducing two coefficients(m and t). The coefficients m and t can modulate the curves widths and peak values. The simulated results under reverse mode and forward mode are obviously in agreement with the experimental results. This proves that this model can be applicable for generation current and recombination current and that the theory behind the model is reasonable. The details of the relevant mechanism are given in the paper.
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关 键 词: | 场效应晶体管 复合电流 调制 金属 n型 MOSFET 界面陷阱 电子密度 |
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