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Bipolar tri-state resistive switching characteristics in Ti/CeO_x/Pt memory device
Authors:M.Ismail  M.W.Abbas  A.M.Rana  I.Talib  E.Ahmed  M.Y.Nadeem  T.L.Tsai  U.Chand  N.A.Shah  M.Hussain  A.Aziz  M.T.Bhatti  
Affiliation:M.Ismail;M.W.Abbas;A.M.Rana;I.Talib;E.Ahmed;M.Y.Nadeem;T.L.Tsai;U.Chand;N.A.Shah;M.Hussain;A.Aziz;M.T.Bhatti;Department of Physics, Bahauddin Zakariya University;Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University;Thin Films Technology Research Laboratory, Department of Physics, COMSATS Institute of Information Technology;Center for High Energy Physics, University of Punjab;
Abstract:multilevel resistive switching Schottky emission cerium oxide oxygen vacancy
Keywords:multilevel resistive switching  Schottky emission  cerium oxide  oxygen vacancy
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