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Universal behaviour of metal–insulator transitions in the p-SiGe system |
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| Authors: | P. T. Coleridge P. Zawadzki A. S. Sachrajda R. L. Williams Y. Feng |
| Abstract: | Magnetoresistance measurements are presented for a strained p-SiGe quantum well sample where the density is varied through the B=0 metal–insulator transition. The close relationship between this transition, the high-field Hall insulator transition and the filling factor insulating state is demonstrated. |
| Keywords: | Metal– insulator transition SiGe Quantum wells |
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