Field-effect transistor memories based on ferroelectric polymers |
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Authors: | Yujia Zhang Haiyang Wang Lei Zhang Xiaomeng Chen Yu Guo Huabin Sun Yun Li |
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Institution: | School of Electronic Science and Engineering, National Laboratory of Solid-State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China |
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Abstract: | Field-effect transistors based on ferroelectrics have attracted intensive interests, because of their non-volatile data retention, rewritability, and non-destructive read-out. In particular, polymeric materials that possess ferroelectric properties are promising for the fabrications of memory devices with high performance, low cost, and large-area manufacturing, by virtue of their good solubility, low-temperature processability, and good chemical stability. In this review, we discuss the material characteristics of ferroelectric polymers, providing an update on the current development of ferroelectric field-effect transistors (Fe-FETs) in non-volatile memory applications. |
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Keywords: | ferroelectric polymers field-effect transistor memories ferroelectricity |
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