Istituto di Fisica del Politecnico di Milano, Milano Italy
Stanford Electronics Laboratories, Stanford University, Stanford, CA 94305 U.S.A.
Dipartimento di Fisica dell 'Università, Modena Italy
Abstract:
The first complete analysis of photoionization cross section in the whole valence band of 2H-MoS2 is reported. The measurements, taken with synchrotron radiation in the 65–190 eV energy range, allow the identification of the Mo 4d contribution to the electron states in the different regions of the valence density of states. In particular it is found that the deepest valence peak contains a considerable 4d contribution.