EPR study of porous silicon |
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| Authors: | Fu Jishi Mao Jinchang Wu En Jia Yongqiang Zhang Borui Zhang Lizhu Qin Guogang Zhang Yuhua Wui Genshuan |
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| Affiliation: | (1) Department of Physics, Peking University, 100871 Beijing, PR China;(2) Department of Technical Physics, Peking University, 100871 Beijing, PR China |
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| Abstract: | An anisotropic EPR signal was observed in porous Si. According to its symmetry andg value, the EPR signal can be attributed to silicon dangling bonds located on the surface of a porous Si skeleton. The evolution of the EPR signal at room temperature in air was measured. The annealing temperature dependence of the EPR and the PL of porous Si in oxygen and the effects of gamma irradiation on the EPR and the PL spectra of porous Si were studied. The changes of the EPR signal and the PL intensity induced in atmosphere by ethyl alcohol and acetone were discovered. The dangling bond is only one of the factors which affect the PL.This project is supported by the National Natural Science Foundation of China. |
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