Photoluminescence of polycrystalline CuIn0.5Ga0.5Te2 thin films grown by flash evaporation |
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| Authors: | L. Yandjah L. Bechiri M. Benabdeslem N. Benslim A. Amara X. Portier M. Bououdina A. Ziani |
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| Affiliation: | 1. LPMR, Department of Material Sciences, Faculty of Science and Technology, Univ-Souk-Ahras 41000. Algeria;2. (LESIMS)-(LEREC), Département de Physique, Faculté des Sciences, Univ-Badji Mokhtar, Annaba, Algeria;3. CIMAP, Centre de recherche sur les ions, les matériaux et la photonique, CEA, UMR 6252 CNRS, ENSICAEN, UCBN, 6-Boulevard du Maréchal Juin, Caen Cedex 14050, France;4. Department of Physics, College of Science, University of Bahrain, PO Box 32038, Bahrain;5. KAUST Catalysis Center (KCC), Catalysis for Energy Conversion Team (CATEC). Building 3, Level 4, Office number 4288-WS10, 4700 KAUST Thuwal 23955–6900 Saudi Arabia |
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| Abstract: | Polycrystalline CuIn0.5Ga0.5Te2 films were deposited by flash evaporation from ingot prepared by reacting, in stoichiometric proportions, high purity Cu, In, Ga and Te elements in vacuum sealed quartz. The as-obtained films were characterized by X – ray diffraction (XRD), transmission electron microscopy (TEM) combined with energy dispersive spectroscopy (EDS). XRD and TEM results showed that the layer has a chalcopyrite-type structure, predominantly oriented along (112) planes, with lattice parameters a?=?0.61?nm and c?=?1.22?nm. The optical properties in the near - infrared and visible range 600–2400?nm have been studied. The analysis of absorption coefficient yielded an energy gap value of 1.27?eV. Photoluminescence analysis of as-grown sample shows two main emission peaks located at 0.87 and 1.19?eV at 4?K. |
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| Keywords: | Chalcogenides Optical materials Semiconductors Thin films Transmission electron microscopy |
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