Influence of substrate bias and pressure on microstructure of TiN x films reactively sputtered by cylindrical post magnetron

This contribution analyzes the influence of the bias voltageU _b and the total pressure of working gas mixturep _TOT=p _Ar+p _N2 on the microstructure of grown TiN _x films and the direction of growth of crystallites in the films with respect to the film-substrate interface.The authors would like to thank J. vub for performing the scanning electron micrographs of TiN _x films and J. Vyskoil for many useful discussions.