Electron spectroscopy of the nanostructures created in Si, GaAs, and CaF2 surface layers using low-energy ion implantation |
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| Authors: | B E Umirzakov D A Tashmukhamedova D M Muradkabilov Kh Kh Boltaev |
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| Institution: | 1. Tashkent State Technical University, Universitetskaya ul. 2, Tashkent, 100095, Uzbekistan
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| Abstract: | A review of the experimental results on the study of the Si, GaAs, and CaF2 surface layers that are created using the low-energy ion implantation is presented. Optical and electron spectroscopy and microscopy are employed in the experiments. |
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