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Selectively embedded growth by chemical beam epitaxy for the fabrication of InGaAs/InP double-heterostructure lasers |
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| Authors: | M. Gotoda H. Sugimoto Y. Nomura T. Isu M. Nunoshita S. Maruno |
| Affiliation: | a Semiconductor Research Laboratory, Mitsubishi Electric Corporation, 8-1-1, Tsukaguchi-Honmachi, Amagasaki, Hyogo 661, Japan b Optoelectronics Technology Research Corporation, 8-1-1, Tsukaguchi-Honmachi, Amagasaki, Hyogo 661, Japan |
| Abstract: | In order to fabricate InGaAs/InP double-heterostructure (DH) lasers, a novel selectively embedded one-step growth by chemical beam epitaxy (CBE) was adopted. Before the selective CBE growth, 6–8 μm wide channels on an n-InP substrate were undercut by wet chemical etching through a 170 nm thick SiO2 film mask. A 6 μm wide stripe-geometry DH laser structure with an active layer of 0.14 μm thickness was grown selectively with good planarity into the channels and operated by a pulse. |
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