| GaN基发光二极管外延中p型AlGaN电子阻挡层的优化生长 |
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| 引用本文： | 王兵,李志聪,姚然,梁萌,闫发旺,王国宏. GaN基发光二极管外延中p型AlGaN电子阻挡层的优化生长[J]. 物理学报, 2011, 60(1): 16108-016108 |
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| 作者姓名： | 王兵 李志聪 姚然 梁萌 闫发旺 王国宏 |
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| 作者单位： | 中国科学院半导体研究所 半导体照明研发中心,北京 100083 |
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| 基金项目： | 国家高技术研究发展计划(批准号:2006AA03A114) 资助的课题. |
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| 摘 要： | 本文利用金属有机物化学气相沉积(MOCVD)方法系统地研究了p-AlGaN层掺杂机理及优化设计生长. 明确了生长温度、压力及TMAl的流量对AlGaN层Al组分的影响关系,并给出了各自不同的机理与作用. 研究发现,Al组分介于10%—30%之间能够很好地将电子限定在量子阱区域并保持高的材料晶体质量. 发展了一种新的生长技术来克服p-AlGaN层掺入效率低下和空穴注入不足的问题. 优化条件下生长的p型AlGaN电子阻挡层很大地提升了InGaN/GaN基LED的输出光功率.关键词：氮化镓基LEDAl组分电子阻挡层
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| 关 键 词： | 氮化镓基 LED Al组分 电子阻挡层 |
| 收稿时间： | 2010-04-19 |
Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED |
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| Wang Bing,Li Zhi-Cong,Yao Ran,Liang Meng,Yan Fa-Wang,Wang Guo-Hong. Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED[J]. Acta Physica Sinica, 2011, 60(1): 16108-016108 |
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| Authors: | Wang Bing Li Zhi-Cong Yao Ran Liang Meng Yan Fa-Wang Wang Guo-Hong |
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| Affiliation: | Lighting R & D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Lighting R & D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Lighting R & D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Lighting R & D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Lighting R & D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Lighting R & D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | In the High-power InGaN /GaN-based LED structures,p-AlGaN layer plays a role as electron blocking layer. In this paper,GaN /InGaN-based LED have been grown on sapphire by metal organic chemical vapor deposition (MOCVD),and the p-type doping mechanism and structural optimization of AlGaN layer were studied. The ways to change AlGaN components have been discussed. We found that the growth temperature,growth pressure and flow TMAl ( mole ratio) have strong effect on the Al components through different mechanis... |
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| Keywords: | GaN-based LED Al composition electron blocking layer |
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