Ionization mechanisms of aluminum acceptor impurity in silicon |
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| Authors: | T N Mamedov D G Andrianov D Herlach V N Gorelkin A V Stoikov U Zimmermann |
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| Institution: | (1) Joint Institute for Nuclear Research, Dubna, Moscow region, 141980, Russia;(2) State Research and Project Institute of Rare-Metal Industry “Giredmet,”, Moscow, 109017, Russia;(3) Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland;(4) Moscow Institute of Physics and Technology, Institutskii per. 9, Dolgoprudnyi, Moscow region, 141700, Russia |
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| Abstract: | Processes of ionization of shallow acceptor centers (ACs) in silicon are studied. In crystalline silicon samples with phosphorus (1.6×1013, 2.7×1013, and 2.3×1015cm?3) and boron (1.3×1015cm?3) impurities, μAl impurity atoms were produced by implantation of negative muons. It is found that thermal ionization is the main mechanism for ionizing the Al acceptor impurity in both p-type and n-type silicon with an impurity concentration of ?1015cm?3 at T>45 K. The thermal ionization rate of Al ACs in Si varies from ～105 to ～106s?1 in the temperature range 45–55 K. |
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