Influence of growth temperature and post-annealing on an n-ZnO/p-GaN heterojunction diode |
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Authors: | Sanjeev K. Sharma Sungeun Heo Byoungho LeeHwangho Lee Changmin KimDeuk Young Kim |
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Affiliation: | Semiconductor Materials and Device Laboratory, Department of Semiconductor Science, Dongguk University-Seoul, Jung-gu, Seoul 100-715, Republic of Korea |
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Abstract: | We report on an n-ZnO/p-GaN heterojunction diode fabricated from zinc oxide (ZnO) films at various growth temperatures (450, 500, 550, and 600 °C) by RF sputtering. The films were subsequently annealed at 700 °C in N2 ambient. To investigate the influence of the growth temperature of n-ZnO films, the microstructural, optical, and electrical properties were measured using scanning electron microscopy (SEM), X-ray diffraction (XRD), photoluminescence (PL), and Hall measurements. The XRD pattern showed the preferred orientation along the c-axis (002) regardless of growth temperature. The PL spectra showed a dominant sharp near-band-edge (NBE) emission. Current–voltage (I–V) curves showed excellent rectification behavior. The turn-on voltage of the diode was observed to be 3.2 V for the films produced at 500 °C. The ideality factor of ZnO film was observed to be 1.37, which showed the best performance of the diode. |
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Keywords: | n-ZnO/p-GaN heterojunction Growth temperature Microstructural properties Diode characteristics |
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