Effect of thermal annealing on the magnetic anisotropy of GaMnAs ferromagnetic semiconductor |
| |
Authors: | Yujin Jeong Hakjoon Lee Sangyeop Lee Taehee Yoo Sanghoon Lee X Liu JK Furdyna |
| |
Institution: | 1. Physics Department, Korea University, Seoul 136-713, South Korea;2. Physics Department, University of Notre Dame, Notre Dame, IN 46556, USA |
| |
Abstract: | We have systematically investigated the influence of annealing on the magnetic anisotropy properties of GaMnAs film using an epilayer with a Mn concentration of 6.2%. The GaMnAs epilayer was grown by molecular beam epitaxy and the planar Hall effect measurement was used to monitor the magnetic anisotropy of the film. We found significant annealing-induced changes in the magnetic anisotropy properties of the GaMnAs film that depended on the annealing conditions. For example, the cubic anisotropy that gave a four-fold symmetry of magnetic easy axes decreased while the uniaxial anisotropy that gave a two-fold symmetry of magnetic easy axes increases in the samples annealed temperature below 300 °C. In particular, the uniaxial anisotropy along the 010] direction in as-grown GaMnAs film changed to the 100] direction by rotating by 90° after the sample was annealed at 300 °C for 3 h. This investigation thus indicates that the magnitude and the direction of the magnetic anisotropy in the GaMnAs film can be effectively controlled by choosing an appropriate annealing time and temperature. |
| |
Keywords: | Ferromagnetic semiconductor Magnetic anisotropy Planar Hall effect |
本文献已被 ScienceDirect 等数据库收录! |