Correlation between crystallinity and resistive switching behavior of sputtered WO3 thin films |
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| Authors: | Thi Bang Tam Dao Kim Ngoc Pham Yi-Lung Cheng Sang Sub Kim Bach Thang Phan |
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| Institution: | 1. Faculty of Materials Science, University of Science, Vietnam National University, Ho Chi Minh City, Viet Nam;2. Department of Electrical Engineering, National Chi-Nan University, Nan-Tou, Taiwan, ROC;3. Department of Materials Science and Engineering, Inha University, Republic of Korea;4. Laboratory of Advanced Materials, University of Science, Vietnam National University, Ho Chi Minh City, Viet Nam |
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| Abstract: | The as-deposited WO3 thin films were post-annealed at different temperatures (300 °C and 600 °C) in air to investigate a correlation between crystallinity and switching behavior of WO3 thin films. Associating the results of XRD, FTIR, XPS and FESEM measurements, the annealing-caused crystallinity change contributes to the variation of the switching behaviors of the WO3 thin films. The as-deposited WO3 films with low crystalline structure are preferred for random Ag conducting path, resulting in large switching ratio but fluctuating I–V hysteresis, whereas the annealed WO3 films with crystallized compact structure limits Ag conducting path, favoring the stable I–V hysteresis but small switching ratio. It is therefore concluded that electrochemical redox reaction-controlled resistance switching depends not only on electrode materials (inert and reactive electrodes) but also on crystallinity of host oxide. |
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| Keywords: | Resistive random access memory (ReRAM) WO3 thin films Electrochemical redox Crystallinity Annealing |
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