Abnormal resistance–temperature characteristic of the melting Bi nanowires |
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Authors: | Xue-wei Wang Chao Ma Bing-cheng Fang Zhi-hao Yuan |
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Institution: | 1. School of Materials Science & Engineering, Tianjin University of Technology, Tianjin 300384, People''s Republic of China;2. Tianjin Key Lab for Photoelectric Materials and Devices, Tianjin 300384, People''s Republic of China;3. Key Laboratory of Display Materials & Photoelectric Devices, Tianjin University of Technology, Ministry of Education, Tianjin 300384, People''s Republic of China |
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Abstract: | There are no reports about the electronic transport behavior of the melting metal nanostructures because the morphology of nanostructures cannot be kept under the melting condition. Here, the electronic properties of the melting Bi nanowires are investigated using the pore confinement of anodic aluminum oxide template. The results indicate that with the increase of temperature the resistance of Bi nanowires has a transition from the positive temperature coefficient of resistance before fusion to the negative one after fusion. Moreover, as the temperature gradually increases, the resistance of the melting Bi nanowires rapidly decreases at first, and then tardily decreases. This research provides fundamental and valuable information for exploring and designing the new electronic devices under the high temperature. |
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Keywords: | Metal Nanostructures Heat treatment Electrical properties |
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