Modified gap states in Fe/MgO/SrTiO3 interfaces studied with scanning tunneling microscopy |
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| Authors: | Hyung-Joon Shin Seong Heon Kim Heejun Yang Young Kuk |
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| Institution: | 1. School of Materials Science and Engineering, KIST-UNIST Ulsan Center for Convergent Materials, Center for Multidimensional Carbon Materials and Low Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Republic of Korea;2. Samsung Advanced Institute of Technology, Gyeonggi-do 443-803, Republic of Korea;3. Department of Energy Science, Sungkyunkwan University, Suwon 440-746, Republic of Korea;4. Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Republic of Korea |
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| Abstract: | The geometric and electronic structures of Fe islands on MgO film layers were studied with scanning tunneling microscopy and spectroscopy. The MgO layers were grown on a Nb-doped single crystal SrTiO3 (100) surface. Deposited Fe atoms aggregate into islands, the height and diameter of which are about 2.5 and 9.4 nm respectively. Fe islands modify the electronic structure of MgO surface; a ring type depression in the scanning tunneling microscope topography appears by lowered local electron density of states around Fe islands. We find that adsorbed Fe atoms reduce the gap states of MgO layers around Fe islands, which is attributed to the reason for the depletion of the electronic density of states. |
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| Keywords: | MgO SrTiO3 Interface state STM STS |
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