Effects of carbon doping on chemical states of amorphous Ge2Sb2Te5, measured with synchrotron radiation |
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| Authors: | Min-Cherl Jung Young Mi Lee Kihong Kim |
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| Institution: | 1. Energy Materials and Surface Sciences Unit, Okinawa Institute of Science and Technology Graduate School, Okinawa 904-0495, Japan;2. Pohang Accelerator Laboratory, POSTECH, Pohang 790-784, Republic of Korea;3. AE Center, Samsung Advanced Institute of Technology, P. O. Box 111, Suwon 440-600, Republic of Korea |
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| Abstract: | We fabricated and analyzed the chemical states of carbon-doped (5.2–13.2 at.%) Ge2Sb2Te5 thin films on Si substrates using high-resolution, X-ray photoelectron spectroscopy with synchrotron radiation. Thin films were completely amorphous and their phase-change temperature was 150 °C higher than for un-doped GST. As the carbon doping concentration increased, new chemical states of Ge 3d with 29.9 eV and C 1s with 283.7 eV core-levels were observed. The doped carbon was bonded only with Ge in GST and doping was saturated at 8.7 at.%. |
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| Keywords: | C doped Ge2Sb2Te5 Phase-change material Chemical states High-resolution X-ray photoelectron spectroscopy Synchrotron radiation |
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