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Effects of electron-beam irradiation on structural,electrical, and optical properties of amorphous indium gallium zinc oxide thin films |
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| Authors: | Kiseok Jeon Seung Wook Shin Jaeseung Jo Myung Sang Kim Jae Cheol Shin Chaehwan Jeong Jun Hyung Lim Junho Song Jaeyeong Heo Jin Hyeok Kim |
| Institution: | 1. Department of Materials Science and Engineering and Optoelectronics Convergence Research Center, Chonnam National University, Gwangju 500-757, Republic of Korea;2. Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Republic of Korea;3. Korea Photonics Technology and Institute, Gwangju 550-779, Republic of Korea;4. Department of Physics, Yeungnam University, Gyeonbuk 712-749, Republic of Korea;5. Applied Optics & Energy Research Group, Korea Institute of Industrial Technology, Gwangju 500-480, Republic of Korea;6. Display Research Center, Samsung Display, Yongin-si, Kyeongi-do 446-811, Republic of Korea |
| Abstract: | High-energy electron-beam irradiation of indium gallium zinc oxide (IGZO) films improved the short-range arrangement. The increase in band gap was used as an indication of such improvement. X-ray diffraction confirmed that the films treated with a DC voltage of 2–4.5 kV for duration of up to 35 min are in the amorphous state or nanocrystalline phase. Higher energy electron-beam irradiation led to increased conductivity, which mainly comes from the drastic increase in electron concentration. Electron-beam treatment could be a viable route to improve the contact resistance between the source/drain and channel layer in thin-film transistor devices. |
| Keywords: | Amorphous oxide semiconductor Indium gallium zinc oxide Electron-beam irradiation |
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