| 直拉法生长Y3Al5O12(YAG)单晶体中的位错和包裹物 |
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| 引用本文： | 葛传珍,徐秀英,冯端.直拉法生长Y3Al5O12(YAG)单晶体中的位错和包裹物[J].物理学报,1982,31(3):415-418. |
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| 作者姓名： | 葛传珍 徐秀英 冯端 |
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| 作者单位： | 南京大学固体物理研究所 |
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| 摘 要： | 通过光双折射貌相法研究了YAG单晶体中位错、包裹物以及生长层间的关系,结果表明,包裹物优先吸附于固液界面上的位错露头点,而包裹物的大小与该处生长台阶的大小有关。
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| 收稿时间： | 6/1/1981 12:00:00 AM |
DISLOCATIONS AND INCLUSIONS IN CZOCHRALSKI METHOD-GROWN YAG SINGLE CRYSTALS |
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| GE CHUAN-ZHEN,XU XIU-YING and FENG DUAN.DISLOCATIONS AND INCLUSIONS IN CZOCHRALSKI METHOD-GROWN YAG SINGLE CRYSTALS[J].Acta Physica Sinica,1982,31(3):415-418. |
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| Authors: | GE CHUAN-ZHEN XU XIU-YING and FENG DUAN |
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| Abstract: | The relationship between the dislocations, the inclusions and the growth striations in YAG single crystals were studied with birefringence topography. The experimental evidence shows that the inclusions are adsorped preferentially at the outcrops of dislocations at the solid-liquid interface and the relative sizes of the inelusions correspond to the heights of growth-steps which are related to the normal components of Burgers vectors of dislocations. |
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