Attenuation of the depolarizing field in a thin film model relaxor |
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| Authors: | Manuel I. Marqués Carmen Aragó |
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| Affiliation: | 1. CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012, India;2. Academy of Scientific and Innovative Research (AcSIR), CSIR-National Physical Laboratory (CSIR-NPL) Campus, Dr. K. S. Krishnan Road, New Delhi 110012, India;3. Solar and Alternative Energy, Amity University, Jaipur, Rajasthan, 302006, India;4. Department of Physics, Miranda House, University of Delhi, Delhi 110007, India;5. Department of Physics and Astrophysics, University of Delhi, Delhi 110007, India;6. Department of Chemistry and Department of Physics, University of St. Andrews, St. Andrews KY16 ST, United Kingdom, UK;1. Functional Materials Research Laboratory, Tongji University, 1239 Siping Road, Shanghai 200092, China;2. National Institute of Advanced Industrial Science and Technology, Kyushu, 807-1 Shuku, Tosu, Saga 841-0052, Japan;1. University POLITEHNICA of Bucharest, 060042, Romania;2. National Institute for Lasers, Plasma and Radiation Physics, P.O. Box MG54, 077125 Magurele, Romania;3. National Institute of Materials Physics, P.O. Box MG-7, Bucharest-Magurele 077125, Romania;4. METAV-R&D S. A., P.O. 22, Bucharest, Romania;1. Departamento de Física Aplicada I, Escuela de Ingeniería de Bilbao, Universidad del País Vasco UPV/EHU, Plaza Ingeniero Torres Quevedo 1, 48013, Bilbao, Spain;2. Institute for Solid State Physics and Chemistry, Uzhgorod University, 88000, Uzhgorod, Ukraine;3. Department of Chemistry, University of Genova, Via Dedecaneso 31, Genova, 16146, Italy;4. Institute SPIN-CNR, Corso Perrone 24, 16152, Genova, Italy;1. CFisUC, Department of Physics, University of Coimbra, 3004-516 Coimbra, Portugal;2. Research University of Electronic Technology “MIET”, Zelenograd, 124498 Moscow, Russia;3. I.M. Sechenov First Moscow State Medical University, 119991 Moscow, Russia;4. CQC, Department of Chemistry, University of Coimbra, 3004-535 Coimbra, Portugal;5. NTMDT Spectrum Instruments, Zelenograd, 124460 Moscow, Russia |
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| Abstract: | The behavior of the polarization in a microscopic statistical model for a thin film relaxor placed between two metallic electrodes is studied by numerical simulations. Depolarization fields different from zero, due to a non-perfect compensation of surface charges at the metallic electrodes, are taken into account. Different thicknesses and different values of the compositional charge disorder density for the relaxor are considered. Depolarization field is found to be extremely attenuated for large values of the number density of charge carriers in the relaxor. In such a case, field attenuation allows for the existence of a homogeneous ferroelectric ground state. |
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