Spin polarization and spin-dependent transmittance in II–VI diluted magnetic semiconductorheterostructure |
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| Authors: | S Mnasri N Sfina S Abdi-Ben Nasrallah J-L Lazzari M Saïd |
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| Institution: | 1. Unité de Recherche de Physique des Solides, Département de Physique, Faculté des Sciences de Monastir, 5019 Monastir, Tunisia;2. Centre Interdisciplinaire de Nanoscience de Marseille, CINAM, UPR CNRS 3118, Aix-Marseille Université, Campus de Luminy, Case 913, 13288 Marseille cedex 09, France;1. Instituto de Alta Investigación, Universidad de Tarapacá, Casilla 7D, Arica, Chile;2. Department of Solid State Physics, Yerevan State University, Alex Manoogian 1, 0025 Yerevan, Armenia;3. National University of Architecture and Construction of Armenia, Teryan 105, 0009 Yerevan, Armenia;4. SUPA School of Physics and Astronomy, University of Glasgow, Glasgow G12 8QQ, United Kingdom;1. Department of Electrical Engineering, Urmia Branch, Islamic Azad University, Urmia, Iran;2. Department of Electrical Engineering, Faculty of Electrical and Computer Engineering, Shahid Beheshti University, G. C. 1983963113, Tehran, Iran;3. Young Researchers and Elite Club, Hidaj Branch, Islamic Azad University, Hidaj, Iran;4. Department of Electrical Engineering, Mahabad Branch, Islamic Azad University, Mahabad, Iran;1. Department of Physics, Damavand Branch, Islamic Azad University, Damavand 39718-78911, Iran;2. Young Researchers and Elites Club, Damavand Branch, Islamic Azad University, Damavand 39718-78911, Iran;3. Department of Physics, Iran University of Science and Technology, Narmak, Tehran 16846, Iran |
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| Abstract: | In this work, we carried out detailed investigation of a Cd1?xMnxTe/CdTe/Cd1?xMnxTe diluted magnetic semiconductor based quantum well. Our theoretical results are based on an accurate self-consistent resolution of the one-dimension Schrödinger and Poisson’s equations in the framework of the mean-field approximation for spin-up and spin-down orientations of carriers coupled via the sp–d exchange interaction. From the calculation of spin-dependent carrier densities for ferromagnetic and anti-ferromagnetic coupling, we evidence the spin-up and spin-down space separation for holes in quantum well for different values of band offsets. From deduced spin polarizations, we show that the CdTe region acts as a layer of spin rearrangement and spin reversal, respectively, in the ferromagnetic and anti-ferromagnetic coupling. The transmittance coefficients T+ and T? of injected spin-up and spin-down carriers are evaluated as a preliminary work to assess the spin-dependent currents in devices consisting of alternatively layers of non-magnetic and diluted magnetic semiconductors. |
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