首页 | 本学科首页   官方微博 | 高级检索  
     


Investigation of avalanche photocurrent at the edge of fundamental absorption band in Schottky diodes
Authors:A. K. Babak  S. S. Kil'chitskaya  V. I. Strikha  V. A. Afanas'ev  A. V. Ievskii  N. G. Lozovaya
Affiliation:(1) T. G. Shevchenko Kiev State University, USSR
Abstract:The relative importance of the contribution of two mechanisms, that of the change in the collection of photocurrent carriers and that of the shift of the edge of fundamental absorption of light in strong electric fields in Schottky photodiodes, to the observed spectral dependence of the avalanche photocurrent is asessed.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 83–86, December, 1985.
Keywords:
本文献已被 SpringerLink 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号