Quaternary tellurides with different valent Ge centers: Cs2Ge3M6Te14 (M = Ga, In) |
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Authors: | Zhang Cheng-Yi Zhou Liu-Jiang Chen Ling |
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Affiliation: | Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, People's Republic of China. |
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Abstract: | New quaternary tellurides, Cs(2)Ge(3)M(6)Te(14) (M = Ga, In), were discovered by solid-state reactions. These compounds crystallize in space group P3ml (No. 164), with a = b = 8.2475(2) ?, c = 14.2734(8) ?, and V = 840.82(6) ?(3) (Z = 1) for Cs(2)Ge(3)Ga(6)Te(14) (1) and a = b = 8.5404(2) ?, c = 14.6766(8) ?, and V = 927.07(6) ?(3) (Z = 1) for Cs(2)Ge(3)In(6)Te(14) (2). The remarkable structural feature is the novel three-dimensional [Ge(3)M(6)Te(14)](2-) anionic framework made by condensed In(6)Te(14) (or Ga(6)Te(14)) layers that are connected alternately by dimeric Ge(3+)(2)Te(6) units and Ge(2+)Te(6) octahedra along the c direction. The presence of Ge centers with different oxidation states is also supported by the results of the electron localization function calculation and X-ray photoelectron spectroscopy measurement. |
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