| A percolation study of RTS noise in deep sub-micron MOSFET by Monte Carlo simulation |
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| 引用本文： | 马仲发,庄奕琪,杜磊,魏珊. A percolation study of RTS noise in deep sub-micron MOSFET by Monte Carlo simulation[J]. 中国物理, 2005, 14(4): 808-811 |
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| 作者姓名： | 马仲发 庄奕琪 杜磊 魏珊 |
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| 作者单位： | Institute of Microelectronics Key Laboratory of Ministry of Education for Wide Band-gap Semiconductor Materials and Devices, Xidian University, Xi'an,710071, China;Institute of Microelectronics Key Laboratory of Ministry of Education for Wide Band-gap Semiconductor Materials and Devices, Xidian University, Xi'an,710071, China;Institute of Microelectronics Key Laboratory of Ministry of Education for Wide Band-gap Semiconductor Materials and Devices, Xidian University, Xi'an,710071, China;Institute of Microelectronics Key Laboratory of Ministry of Education for Wide Band-gap Semiconductor Materials and Devices, Xidian University, Xi'an,710071, China |
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| 基金项目： | Project supported by the National Natural Science Foundation of China (Grant No 60276028), the National Defence Foundation (Grant No 51411040601DZ014) and the Key lab Foundation of National Defence Science $&$ Technology (Grant No 51433030103DZ01) |
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| 摘 要： | Based on percolation theory and random telegraph signal (RTS) noise generation mechanism, a numerical model for RTS in deep submicron metal-oxide-semiconductor field-effect transistor (MOSFET) was presented, with which the dependence of Tc/Te (where Tc=capture time, Te=emission period ) on energy levels and trap depth with respect to the interface of traps can be simulated. Compared with experimental results, the simulated ones showed a good qualitative agreement.
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| 关 键 词： | 过滤研究 随机电报信号噪声 衰退机制 数学模型 金属-氧化物-半导体场效应晶体管 |
| 收稿时间： | 2004-08-18 |
A percolation study of RTS noise in deep sub-micron MOSFET by Monte Carlo simulation |
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| Ma Zhong-F,Zhuang Yi-Qi,Du Lei and Wei Shan. A percolation study of RTS noise in deep sub-micron MOSFET by Monte Carlo simulation[J]. Chinese Physics, 2005, 14(4): 808-811 |
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| Authors: | Ma Zhong-F Zhuang Yi-Qi Du Lei Wei Shan |
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| Affiliation: | Institute of Microelectronics Key Laboratory of Ministry of Education for Wide Band-gap Semiconductor Materials and Devices, Xidian University, Xi'an,710071, China |
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| Abstract: | Based on percolation theory and random telegraph signal (RTS) noise generation mechanism, a numerical model for RTS in deep submicron metal-oxide-semiconductor field-effect transistor (MOSFET) was presented,with which the dependence of ${tau_{rm c} }/ {tau_e }$ (where $tau_{rm c} $=capture time, $tau_e$=emission period ) on energy levels and trap depth with respect to the interface of traps can be simulated. Compared with experimental results, the simulated ones showed a good qualitative agreement. |
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| Keywords: | MOSFET RTS noise ${tau_{rm c} }/{tau_e}$ percolation model |
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